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Boron-Interstitial Cluster Kinetics: Extraction of Binding Energies from Dedicated Experiments

Published online by Cambridge University Press:  17 March 2011

Christophe J. Ortiz ,
Peter Pichler ,
Volker Häaublein ,
Giovanni Mannino ,
Silvia Scalese ,
Vittorio Privitera ,
Sandro Solmi  and
Wilfried Lerch
Christophe J. Ortiz
Affiliation:
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie Schottkystrasse 10, 91058 Erlangen, Germany
Peter Pichler
Affiliation:
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie Schottkystrasse 10, 91058 Erlangen, Germany
Volker Häaublein
Affiliation:
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie Schottkystrasse 10, 91058 Erlangen, Germany
Giovanni Mannino
Affiliation:
IMM-CNR, Sezione di Catania, Stradale Primosole, 95121 Catania, Italy
Silvia Scalese
Affiliation:
IMM-CNR, Sezione di Catania, Stradale Primosole, 95121 Catania, Italy
Vittorio Privitera
Affiliation:
IMM-CNR, Sezione di Catania, Stradale Primosole, 95121 Catania, Italy
Sandro Solmi
Affiliation:
IMM-CNR, Sezione di Bologna, Via P. Gobetti 101, 40129 Bologna, Italy
Wilfried Lerch
Affiliation:
Mattson Thermal Products GmbH, Daimlerstrasse 10, 89160 Dornstadt, Germany
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Abstract

A description of the transient diffusion and activation of boron during post-implantation an- nealing steps is one of the most challenging tasks. In industrially relevant situation, it needs to address diffusion at extrinsic concentrations, the agglomeration of self-interstitials, and the formation of boron-interstitial clusters. This article describes the experimental work performed or used to calibrate model parameters as independently as possible. In particular, the experiments used to extract information about the energetics of boron-interstitial clusters are described.

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References

REFERENCES

1. Pelaz, L., Jaraiz, M., Gilmer, G. H., Gossmann, H.-J., Rafferty, C. S., Eaglesham, D. J., and Poate, J. M., Appl. Phys. Lett., 70(17), 2285 (1997).Google Scholar
2. Caturla, M.-J., Rubia, T. Diaz de la, Zhu, J., and Johnson, M. In Rubia, T. Diaz de la, Coffa, S., Stolk, P. A., and Rafferty, C. S., Eds., Defects and Diffusion in Silicon Processing, Vol. 469 of Mat. Res. Soc. Symp. Proc., 335, 1997.Google Scholar
3. Pichler, P. In Downey, D. F., Law, M. E., Claverie, A. P., and Rendon, M. J., Eds., Silicon Front- End Junction Formation Technologies, Vol. 717 of Mat. Res. Soc. Symp. Proc., C3.1.1, 2002.Google Scholar
4. Solmi, S., Bersani, M., Sbetti, M., Hansen, J. Lundsgaard, and Larsen, A. Nylandsted, J. Appl. Phys., 88(8), 4547 (2000).Google Scholar
5. Pichler, P., Jüngling, W., Selberherr, S., Guerrero, E., and Pötzl, H. W., IEEE Trans. Computer- Aided Design, CAD–4(4), 384 (1985).Google Scholar
6. Silvestri, H. H., Sharp, I. D., Bracht, H. A., Nicols, S. P., Beeman, J. W., Hansen, J., Nylandsted-Larsen, A., and Haller, E. E. In Ashok, S., Chevallier, J., Johnson, N. M., pori, B. L. So-, and Okushi, H., Eds., Defect and Impurity Engineered Semiconductors and Devices III, Vol. 719 of Mat. Res. Soc. Symp. Proc., F13.10.1, 2002.Google Scholar
7. Crowder, B. L., Ziegler, J. F., Morehead, F. F., and Cole, G. W. In Crowder, B. L., Ed., Ion Implantation in Semiconductors and Other Materials, 267, New York, 1973. Plenum Press.Google Scholar
8. Miyake, M., J. Appl. Phys., 57(6), 1861 (1985).Google Scholar
9. Tsoukalas, D. and Chenevier, P., phys. stat. sol. (a), 92, 495 (1985).Google Scholar
10. Willoughby, A. F. W., Evans, A. G. R., Yallup, P. C. K. J., Godfrey, D. J., and Dowsett, M. G., J. Appl. Phys., 59(7), 2392 (1986).Google Scholar
11. Kashio, T. and Kato, K. In Extended Abstracts of the 20th Conference on Solid State Devices and Materials, 121, Tokyo, 1988. Business Center for Academic Societies.Google Scholar
12. OrrArienzo, W. A., Glang, R., Lever, R. F., Lewis, R. K., and Morehead, F. F., J. Appl. Phys., 63(1), 116 (1988).Google Scholar
13. Ortiz, C. J., Pichler, P., Fühner, T., Cristiano, F., Claverie, A., Colombeau, B., and Cowern, N. E. B., A physically-based model for the spatial and temporal evolution of extrinsic defects in ion implanted silicon (submitted to J. Appl. Phys.), 2004.Google Scholar
14. Cowern, N. E. B., Mannino, G., Stolk, P. A., Roozeboom, F., Huizing, H. G. A., Berkum, J. G. M. van, Cristiano, F., Claverie, A., and Jaraíz, M., Phys. Rev. Lett., 82(22), 4460 (1999).Google Scholar
15. Cristiano, F., Cherkashin, N., Hebras, X., Calvo, P., Lamrani, Y., Scheid, E., Mauduit, B. de, Colombeau, B., Lerch, W., Paul, S., and Claverie, A., Nuclear Instruments and Methods in Physics Research B, 216, 45 (2004).Google Scholar
16. Windl, W., Liu, X.-Y., and Masquelier, M. P., phys. stat. sol. (b), 226(1), 37 (2001).Google Scholar
17. Fühner, T., Erdmann, A., Farkas, R., Tollkühn, B., and K'okai, G. in Proceedings of EvoWork- shops 2004, edited by Raidl, et al. (in print), 2004.Google Scholar
18. Jaraiz, M., Castrillo, P., Pinacho, R., Pelaz, L., Barbolla, J., Gilmer, G. H., and Rafferty, C. S. In Agarwal, A., Pelaz, L., Vuong, H.-H., Packan, P., and Kase, M., Eds., Si Front-End Processing—Physics and Technology of Dopant-Defect Interactions II, Vol. 610 of Mat. Res. Soc. Symp. Proc., B11.1.1, 2000.Google Scholar
19. Yamauchi, J., Aoki, N., and Mizushima, I., Phys. Rev. B, 63, 073202 (2001).Google Scholar
20. Windl, W., IEICE Trans. Electron., E86–C(3), 269 (2003).Google Scholar