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C, Si and Sn Implantation of CVD Diamond as a means of Enhancing Subsequent Etch Rate

Published online by Cambridge University Press:  01 February 2011

P. W. Leech ,
T. Perova ,
R. A. Moore ,
G. K. Reeves ,
A. S. Holland  and
M. Ridgway
P. W. Leech
Affiliation:
CSIRO Manufacturing and Infrastructure Technology, Clayton, Victoria, Australia.
T. Perova
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Dublin, Trinity College, Ireland.
R. A. Moore
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Dublin, Trinity College, Ireland.
G. K. Reeves
Affiliation:
RMIT University, School of Computer Systems and Elect. Eng., Melbourne, Australia.
A. S. Holland
Affiliation:
RMIT University, School of Computer Systems and Elect. Eng., Melbourne, Australia.
M. Ridgway
Affiliation:
Dept. of Electronic Materials Engineering, ANU, Canberra, Australia.
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Abstract

Diamond films were implanted with C+, Si+ or Sn+ ions at multiple energies in order to generate a uniform region of implantation-induced disorder. Analysis of the C+ implanted surfaces by micro-Raman spectroscopy has shown only minor increase in the proportion of nondiamond or sp2-bonded carbon at doses of 5 × 1013 - 5 × 1015 ions/cm2. In comparison, an amorphization of the structure was evident after implantation with either Si+ ions at a dose of 5 × 1015 ions/cm2 or with Sn+ ions at >5 × 1014 ions/cm2. At a given implantation dose, the etch rate of the diamond film in a CF4/O2 plasma increased with the mass of the implanted species in the order of C+, Si+ and Sn+. For a given implant species, the etch rate was directly proportional to vacancy concentration as controlled by the dose or the implantation-induced disorder.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 843: Symposium T – Surface Engineering-Fundamentals and Applications , 2004 , T3.2
Copyright
Copyright © Materials Research Society 2005

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References

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