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Carbon Doped Silicon Emitters Fabricated Using Limited Reaction Processing

Published online by Cambridge University Press:  28 February 2011

F.H. Ruddell ,
B.M. Armstrong ,
H.S. Gamble ,
K.B. Affolter ,
P.B. Moynagh  and
P.J. Rosser
F.H. Ruddell
Affiliation:
The Institute of Advanced Microelectronics, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast, BT9 5AH, Northern Ireland
B.M. Armstrong
Affiliation:
The Institute of Advanced Microelectronics, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast, BT9 5AH, Northern Ireland
H.S. Gamble
Affiliation:
The Institute of Advanced Microelectronics, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast, BT9 5AH, Northern Ireland
K.B. Affolter
Affiliation:
STC Technology Ltd., England
P.B. Moynagh
Affiliation:
STC Technology Ltd., England
P.J. Rosser
Affiliation:
STC Technology Ltd., England
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Abstract

This paper describes the deposition of in-situ doped N-type silicon carbide layers in a Limited Reaction Processing (LRP) reactor. Silane/propane/ phosphine gas chemistry was used at temperatures less than 1000°C and SIMS, XPS and TEM analysis techniques aided layer characterisation. A low thermal budget deposition process (1 min at 970°C) was employed to form the emitters of Sic/Si heterojunction NPN bipolar transistors. These devices yielded a factor of two increase in emitter Gummel number compared to diffused emitters.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 553
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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