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Carrier Compensation Mechanism of Highly Conductive Anatase Ti0.94Nb0.06O2 Epitaxial Thin Films

Published online by Cambridge University Press:  01 February 2011

Hiroyuki Nogawa ,
Taro Hitosugi ,
Hideyuki Kamisaka ,
Kouichi Yamashita ,
Akira Chikamatsu ,
Kouhei Yoshimatsu ,
Hiroshi Kumigashira ,
Masaharu Oshima ,
Syoichiro Nadao  and
Yutaka Furubayashi
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Hiroyuki Nogawa
Affiliation:
daen@chem.s.u-tokyo.ac.jp, University of Tokyo, Department of Chemistry, 7-3-1, Hoingou, Bunkyouku, Tokyo, 113-0033, Japan, 03-5841-4603
Taro Hitosugi
Affiliation:
hitosugi@chem.s.u-tokyo.ac.jp, University of Tokyo, Department of Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Hideyuki Kamisaka
Affiliation:
kami@tcl.t.u-tokyo.ac.jp, University of Tokyo, Department of Chemical System Engineering, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Kouichi Yamashita
Affiliation:
yamasita@tcl.t.u-tokyo.ac.jp, University of Tokyo, Department of Chemical System Engineering, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Akira Chikamatsu
Affiliation:
chikamatsu@sr.t.u-tokyo.ac.jp, University of Tokyo, Department of Applied Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Kouhei Yoshimatsu
Affiliation:
yoshimatsu@sr.t.u-tokyo.ac.jp, University of Tokyo, Department of Applied Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Hiroshi Kumigashira
Affiliation:
Kumigashira@sr.t.u-tokyo.ac.jp, University of Tokyo, Department of Applied Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Masaharu Oshima
Affiliation:
oshima@sr.t.u-tokyo.ac.jp, University of Tokyo, Department of Applied Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Syoichiro Nadao
Affiliation:
nakao@ksp.or.jp, Kanagawa Academy of Science and Technology, 3-2-1, Sakado, Takatsuku, Kawasaki, 213-0012, Japan
Yutaka Furubayashi
Affiliation:
Furubayashi@ksp.or.jp, Kanagawa Academy of Science and Technology, 3-2-1, Sakado, Takatsuku, Kawasaki, 213-0012, Japan
Yasushi Hirose
Affiliation:
Hirose@chem.s.u-tokyo.ac.jp, University of Tokyo, Department of Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Toshihiro Shimada
Affiliation:
Shiamada@chem.s.u-tokyo.ac.jp, University of Tokyo, Department of Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Tetsuya Hasegawa
Affiliation:
hasegawa@chem.s.u-tokyo.ac.jp, University of Tokyo, Department of Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
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Abstract

We investigated electrical conduction of anatase Ti0.94Nb0.06O2 (TNO) epitaxial thin films in relation to oxygen defects generated by post-annealing. Annealing of TNO in oxygen was found to cause dramatic decreases in ne. Resonant photoemission spectroscopy measurements revealed that a deep acceptor state just above the top of valence band evolves, synchronized with the decrease of ne. We proposed that the acceptor state originates from interstitial oxygen atoms combined with Nb dopants and compensates electron carriers.

Keywords

thin filmtransparent conductorx-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I05-08
Copyright
Copyright © Materials Research Society 2008

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References

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