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Carrier Injection in a-Si:H P-I-N Devices: Hydrogen Redistribution and Defect Creation

Published online by Cambridge University Press:  01 January 1993

J.M. Asensi ,
J. Andreu ,
J. Puigdollers ,
J. Bertomeu  and
J.C. Delgado
J.M. Asensi
Affiliation:
Laboratori de Física de Capes Fines (LFCF)., Departament de Fisica Aplicada i Electrbnica., Universitat de Barcelona., Avda. Diagonal 647, E-08028 Barcelona, Spain
J. Andreu
Affiliation:
Laboratori de Física de Capes Fines (LFCF)., Departament de Fisica Aplicada i Electrbnica., Universitat de Barcelona., Avda. Diagonal 647, E-08028 Barcelona, Spain
J. Puigdollers
Affiliation:
Laboratori de Física de Capes Fines (LFCF)., Departament de Fisica Aplicada i Electrbnica., Universitat de Barcelona., Avda. Diagonal 647, E-08028 Barcelona, Spain
J. Bertomeu
Affiliation:
Laboratori de Física de Capes Fines (LFCF)., Departament de Fisica Aplicada i Electrbnica., Universitat de Barcelona., Avda. Diagonal 647, E-08028 Barcelona, Spain
J.C. Delgado
Affiliation:
Laboratori de Física de Capes Fines (LFCF)., Departament de Fisica Aplicada i Electrbnica., Universitat de Barcelona., Avda. Diagonal 647, E-08028 Barcelona, Spain
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Abstract

A straightforward analytical expression of the density-of-states (DOS) of a-Si:H valid in non-equilibrium steady state situation has been obtained. The model is based on a statistical-mechanical treatment of the hydrogen occupation for different defect sites. The broadening of available defect energy levels (defect pool) and the possibility of charged defects are taken into account. This leads to a new explanation of the Staebler-Wronski effect, based on the "conversion" of shallow charge centers to neutrals near the middle of the gap as a consequence of hydrogen redistribution induced by electron-hole recombination.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 315
Copyright
Copyright © Materials Research Society 1993

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References

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