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Carrier Transport and Photogeneration in Amorphous Silicon / Crystalline Silicon Heterojunctions with i/n and p/n Interfaces

Published online by Cambridge University Press:  17 March 2011

Yu. Vygranenko ,
M. Fernandes ,
C. Nunes Carvalho ,
G. Lavareda ,
P. Louro ,
A. Amaral ,
R. Schwarz  and
M. Vieira
Yu. Vygranenko
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal, Tel: +351 1 8317181, Fax: +351 1 8317114, e-mail: mv@isel.pt.
M. Fernandes
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal, Tel: +351 1 8317181, Fax: +351 1 8317114, e-mail: mv@isel.pt.
C. Nunes Carvalho
Affiliation:
CFM, IST, Av. Rovisco Pais, 1 P-1096, Lisboa, Portugal
G. Lavareda
Affiliation:
CFM, IST, Av. Rovisco Pais, 1 P-1096, Lisboa, Portugal
P. Louro
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal, Tel: +351 1 8317181, Fax: +351 1 8317114, e-mail: mv@isel.pt.
A. Amaral
Affiliation:
CFM, IST, Av. Rovisco Pais, 1 P-1096, Lisboa, Portugal
R. Schwarz
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal, Tel: +351 1 8317181, Fax: +351 1 8317114, e-mail: mv@isel.pt. Dep. Phys. IST, Av. Rovisco Pais, P-1096, Lisbon, Portugal
M. Vieira
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal, Tel: +351 1 8317181, Fax: +351 1 8317114, e-mail: mv@isel.pt.
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Abstract

Amorphous hydrogenated silicon films deposited by Plasma Enhanced Chemical Vapour Deposition (PE-CVD) using standard rf-glow discharge at 13.56 MHz were used to produce amorphous silicon heterostructures. Junction properties were studied from current-voltage (IV), capacitance-voltage (C-V) and spectral response measurements. The photosensitivity of these structures was investigated for different amorphous film thicknesses and different applied bias voltages. It was shown that the output device characteristics could be improved by plasma hydrogen treatment before the deposition of the amorphous layer. The results show that ITO/a-Si:H/c-Si structures present high internal gain in the visible infra-red region and high collection efficiency in the blue range. They can be used as visible/near-IR photodiodes or for current amplifications proposes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A13.2
Copyright
Copyright © Materials Research Society 2000

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References

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