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Cathodoluminescence Studies of InGaN Quantum Wells

Published online by Cambridge University Press:  10 February 2011

F. A. Ponce ,
S. A. Galloway ,
W. Goetz  and
R. S. Kern
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304 (ponce@parc.xerox.com)
S. A. Galloway
Affiliation:
Oxford Instruments, Tubney Woods, Abingdon, Oxon OX13 5QX, U. K.
W. Goetz
Affiliation:
Hewlett-Packard Company, Optoelectronics Division, 370 W.Trimble Rd., San Jose, CA 95131
R. S. Kern
Affiliation:
Hewlett-Packard Company, Optoelectronics Division, 370 W.Trimble Rd., San Jose, CA 95131
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Abstract

Low temperature cathodoluminescence has been used to investigate the spatial characteristics of light emission in InxGa1−xN single quantum wells. High spatial resolution, narrow band pass imaging shows the luminescence to be strongly inhomogeneous in wavelength as well as in intensity on a sub-micron scale. Cathodoluminescence spectra correlate favorably with photoluminescence spectra. However, when spectra are recorded from different areas in spot mode, the quantum emission varies significantly in wavelength. The observed variations are consistent with composition inhomogeneities in the quantum well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 625
Copyright
Copyright © Materials Research Society 1998

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