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Cathodoluminescence Study Of Diffusion Length And Surface Recombination Velocity In III-V Multiple Quantum Well Structures

Published online by Cambridge University Press:  15 February 2011

L.- L. Chao ,
M. B. Freiler ,
M. Levy ,
J.-L. Lin ,
G. S. Cargill III ,
R. M. Osgood JR.  and
G. F. McLANE
L.- L. Chao
Affiliation:
Department of Chemical Engineering, Materials Science, and Mining Engineering, and
M. B. Freiler
Affiliation:
Columbia Radiation Laboratory, Columbia University, New York, NY 10027
M. Levy
Affiliation:
Columbia Radiation Laboratory, Columbia University, New York, NY 10027
J.-L. Lin
Affiliation:
Columbia Radiation Laboratory, Columbia University, New York, NY 10027
G. S. Cargill III
Affiliation:
Department of Chemical Engineering, Materials Science, and Mining Engineering, and
R. M. Osgood JR.
Affiliation:
Department of Chemical Engineering, Materials Science, and Mining Engineering, and
G. F. McLANE
Affiliation:
U. S.Army Research Laboratory, Ft. Monmouth, NJ 07703
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Abstract

We describe studies of luminescence and lateral transport properties of excited carriers in GaAs- A1GaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from ˜ 8K to 250K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

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References

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