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Challenges and State-of-the-Art of Oxides on SiC

Published online by Cambridge University Press:  21 March 2011

Lori Lipkin ,
Mrinal Das  and
John Palmour
Lori Lipkin
Affiliation:
Cree Inc. Durham NC 27703, U.S.A.
Mrinal Das
Affiliation:
Cree Inc. Durham NC 27703, U.S.A.
John Palmour
Affiliation:
Cree Inc. Durham NC 27703, U.S.A.
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Abstract

Single crystal SiC is a wide band-gap semiconductor with material characteristics that make it quite suitable for high voltage and high current applications. However, these devices are currently limited by their passivation. Significant improvements have been made with oxides on SiC. The most notable oxide processes are the re-oxidation anneal, a stacked ONO dielectric, and nitridation using an NO or N2O anneal. Additional improvements in lateral MOSFET mobility have been achieved using a surface channel implant, and lower temperature implant activation anneals. However, the passivation remains a significant limitation for SiC power devices.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H3.1
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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