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Channeling Contrast Microscopy: A Powerful Tool for Examining Semiconductor Structures

Published online by Cambridge University Press:  25 February 2011

J. C. McCallum ,
R. A. Brown ,
E. Nygren ,
J. S. Williams  and
G. L. Olson
J. C. McCallum
Affiliation:
School of Physics, University of Melbourne, Parkville 3052 Australia
R. A. Brown
Affiliation:
School of Physics, University of Melbourne, Parkville 3052 Australia
E. Nygren
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3000 Australia
J. S. Williams
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3000 Australia
G. L. Olson
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Rd., Malibu CA 90265
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Abstract

Channeling contrast microscopy with a He+ microbeam has been employed to measure 3-dimensional damage distributions and impurity profiles in ion implanted laser annealed silicon. Refinements to the technique are described, involving construction of a precision goniometer to allow accurate orientation of the microbeam with respect to micron-scale- sample features. We have found that indium diffusion in amorphous silicon is significantly less for laser annealing than with lower temperature furnace annealing. Lateral variations in the extent of crystal growth have also been observed across laser irradiated areas less than 100μm.

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 305
Copyright
Copyright © Materials Research Society 1986

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References

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