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Characterisation of Ion Implanted and Thin Epitaxial Layer Structures Using Photoluminescence

Published online by Cambridge University Press:  26 February 2011

B. Hamilton ,
T. O. Sedgwick  and
J. C. Gelpey
B. Hamilton
Affiliation:
IBM, Thomas J. Watson Research Centre,Yorktown Heights, NY 10598, U.S.A.
T. O. Sedgwick
Affiliation:
IBM, Thomas J. Watson Research Centre,Yorktown Heights, NY 10598, U.S.A.
J. C. Gelpey
Affiliation:
IBM, Thomas J. Watson Research Centre,Yorktown Heights, NY 10598, U.S.A.
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Abstract

Photoluminescence (PL) measurements of thin rapidly annealed As implants have been made. The experimental conditions required to enhance the PL signal from the implant region have been established. Our data suggest that residual defects within the implanted volume can completely quench the PL signal. For the range of anneal times investigated (0.3s to 10s) we find that temperatures above 1050°C are needed to remove these defects. Anneal temperatures of 1350°C remove the defects sufficiently to allow us to observe strong PL from the implanted volume..

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References

REFERENCES

[1] Dziewor, K. amd Schmid, W.. Appld. Phys. Lett. 31, 5, p.346 (1977)Google Scholar
[2] Wagner, J., Gelpey, J.C. and Hodgson, R.T.. Appld. Phys. Lett. 45, 1, p. 47 (1984)Google Scholar
[3] Wagner, J., Solid State Elec. 28,1/2, p. 25 (1985)Google Scholar