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Characterisation of Wet Chemical Etching of Algaas Layers Using Dynamic Optical Reflectivity

Published online by Cambridge University Press:  22 February 2011

J. V. Armstrong ,
T. Farrell  and
G. Turner
J. V. Armstrong
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, Liverpool L69 3BX, England.
T. Farrell
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, Liverpool L69 3BX, England.
G. Turner
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, Liverpool L69 3BX, England.
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Abstract

Wet chemical etching of AlGaAs layers using a dilute mixture of ammonium hydroxide and hydrogen peroxide is monitored in real-time using dynamic optical reflectivity (DOR). The AlGaAs layers were grown as a multilayer reflector stack by chemical beam epitaxy (CBE). The reflectivity of a normal incidence 3 mW, 670 nm semiconductor diode laser is monitored during the etching process and analysis of the DOR trace gives the etch rate for the different etchant concentrations used.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 139
Copyright
Copyright © Materials Research Society 1993

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References

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