Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-25T13:20:40.731Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of 4H-SiC JFETs for Use in Analog Amplifiers Capable of 723K Operation

Published online by Cambridge University Press:  15 February 2011

J. B. Casady ,
D. C. Sheridan ,
W. C. Dillard  and
R. W. Johnson
J. B. Casady
Affiliation:
NASA Center for Commercial Development of Space, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849-5201
D. C. Sheridan
Affiliation:
NASA Center for Commercial Development of Space, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849-5201
W. C. Dillard
Affiliation:
NASA Center for Commercial Development of Space, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849-5201
R. W. Johnson
Affiliation:
NASA Center for Commercial Development of Space, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849-5201
Get access

Abstract

Discrete, buried-gate 4H-SiC JFETs (W/L = 1 mm/5 μm) were packaged and characterized at temperatures ranging from 290 K to 773 K for use in a hybrid, 4H-SiC analog amplifier. A contaminated passivation oxide was found to limit high-temperature operation initially, but upon removal of the passivation layer the devices demonstrated stable operation to 773 K with adequate amplification (Av greater than 200 V/V) up to 673 K. From the 16 devices tested, a peak extrinsic saturated transconductance (gmsa) of 27.1 mS/mm was measured at 308 K, corresponding to a channel mobility of 400 cm2/V.s, excluding significant series resistance effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 105
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Morkoc, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., and Bums, M., J. Appl. Phys., 76, 1363 (1994).Google Scholar
2. Neudeck, P. G., J. Elect. Mat., 24, 283 (1995).Google Scholar
3. Casady, J. B. and Johnson, R. W., Solid-St. Elect., in press (1996).Google Scholar
4. Madelung, O., in Semiconductors: Group IV Elements and III-V Compounds, Poerschke, P., Chief Ed., (Springer-Verlag, Berlin, 1991), p. 101–113.Google Scholar
5. Crofton, J., McMullin, P. G., Williams, J. R., and Bozack, M. J., J. Appl. Phys., 77, 1317 (1995).Google Scholar
6. Constitution of Binary Alloys, Hansen, M. and Anderko, K., Eds., (McGraw-Hill, New York, 1958), p. 206.Google Scholar
7. Sze, S. M., Physics of Semiconductor Devices, 2nd ed. (Wiley Press, New York, 1981), p. 318–319.Google Scholar
8. Sridevan, S., McLarty, P. K. and Baliga, B. J., Elect. Dev. Lett., 17, 136 (1996).Google Scholar
9. Dillard, W. C., Casady, J. B., Jaeger, R. C., Sheridan, D. C. and Johnson, R. W., to be presented at 3rd Int'l. High Temp. Elect. Conf. (HiTEC), Albuquerque, NM, June 9–14, (1996).Google Scholar
10. Dohnke, K., Rupp, R., Peters, D., Völkland, J., and Stephani, D., in Silicon Carbide and Rel. Mat., Proc. of 5th Int'l. Conf., Spencer, M. G., Devaty, R. P., Edmond, J. A., Khan, M. A., Kaplar, R., and Rahman, M., Eds., (Inst. Phys. Conf. Ser. No. 137, IOP Publishing, Ltd., 1994), p. 625.Google Scholar
11. Anikin, M. M., Lebedev, A. A., Rastegaeva, M. G., Savkina, N. S., Strel'chuk, A. M., Syrkin, A. L. and Chelnokov, V. E., in Silicon Carbide and Rel. Mat., Proc. of 5th Int'l. Conf., Spencer, M. G., Devaty, R. P., Edmond, J. A., Khan, M. A., Kaplar, R., and Rahman, M., Eds., (Inst. Phys. Conf. Ser. No. 137, IOP Publishing, Ltd., 1994), p. 597.Google Scholar
12. Palmour, J. W., Kong, H.-S. and Carter, C. H., Jr., Int'l. Sem. Device Research Symp., (1991), p. 4 9 1.Google Scholar
13. Neudeck, P. G., Petit, J. B. and Salupo, C. S., in Trans. 2nd Int'l. High Temp. Elect. Conf. (HiTEC), Session X, (1994), p. 23.Google Scholar
14. McLean, F. B., McGarrity, J. M., Scozzie, C. J., Tipton, C. W., and Delancey, W. M., IEEE Trans. Nuc. Sci., 41, 1884, (1994).Google Scholar
15. Scozzie, C. J., Tipton, C. W., DeLancey, W. M., McGarrity, J. M., and McLean, F. B., Proc. of 32nd Int'l. Reliability Physics Conf., (IEEE Press, 1994), pp. 351–358.Google Scholar