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Characterization of Deep Level Defects in 4h and 6H SIC Via DLTS, SIMS And MEV E-Beam Irradiation

Published online by Cambridge University Press:  15 February 2011

J. P. Doyle ,
M. O. Aboelfotoh ,
M. K. Linnarsson ,
B. G. Svensson ,
A. Schöner ,
N. Nordell ,
C. Harris ,
J. L. Lindström ,
E. Janzén  and
C. Hemrnmingsson
J. P. Doyle
Affiliation:
Royal Institute of Technology, Solid State Electronics Electrum 229, S-164 40, Kista-Stockholm, Sweden
M. O. Aboelfotoh
Affiliation:
Royal Institute of Technology, Solid State Electronics Electrum 229, S-164 40, Kista-Stockholm, Sweden
M. K. Linnarsson
Affiliation:
Royal Institute of Technology, Solid State Electronics Electrum 229, S-164 40, Kista-Stockholm, Sweden
B. G. Svensson
Affiliation:
Royal Institute of Technology, Solid State Electronics Electrum 229, S-164 40, Kista-Stockholm, Sweden
A. Schöner
Affiliation:
Industrial Microelectronics Center P.O. Box 1084, S-164 21, Kista-Stockholm, Sweden
N. Nordell
Affiliation:
Industrial Microelectronics Center P.O. Box 1084, S-164 21, Kista-Stockholm, Sweden
C. Harris
Affiliation:
Industrial Microelectronics Center P.O. Box 1084, S-164 21, Kista-Stockholm, Sweden
J. L. Lindström
Affiliation:
National Defense Research Institute P.O. Box 1165, S-581 11 Linköping, Sweden
E. Janzén
Affiliation:
Department of Physics and Measurement Technology Linköping University, S-581 83 Linkoping, Sweden
C. Hemrnmingsson
Affiliation:
Department of Physics and Measurement Technology Linköping University, S-581 83 Linkoping, Sweden
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Abstract

Electrically active defects in both 4H and 6H polytypes of SiC have been observed through the use of deep level transient spectroscopy (DLTS). Schottky contacts were grown by vapor phase epitaxy (VPE) with doping concentrations, the epitaxial layer having a doping concentration in the range of 1014 cm−3 to 1017cm−3. Numerous levels have been found in the as-grown n-type 6H-SiC samples and secondary ion mass spectrometry (SIMS) and MeV electron irradiation have been employed to corrrelate the defect levels to impurities or structural defects. In contrast, only a single level is observed in the as-grown 4H-SiC samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 519
Copyright
Copyright © Materials Research Society 1996

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