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Characterization of Deep Levels in 3C-SiC by Optical-Capacitance-Transient Spectroscopy

Published online by Cambridge University Press:  01 February 2011

Y. Nakakura ,
M. Kato ,
M. Ichimura ,
E. Arai  and
Y. Tokuda
Y. Nakakura
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
M. Kato
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
M. Ichimura
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
E. Arai
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
Y. Tokuda
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Abstract

An optical-capacitance-transient spectroscopy (O-CTS) method was used to characterize the defects in 3C-SiC on Si. The O-CTS measurement enables us to estimate optical threshold energy and optical cross section for the defects. In the O-CTS spectrum, a peak was observed for photon energy hv larger than 0.5 eV. This peak was thought to be due to the ND1 center, which was also observed by deep level transient spectroscopy (DLTS) and found to have a thermal activation energy of 0.37 eV. The optical cross section for the center increased with hv for hv<0.6 eV and then decreased with increasing hv. The apparent optical threshold energy was about 0.47 eV. Another deep levels which have optical threshold energy of around 1.4 eV were also observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F6.4
Copyright
Copyright © Materials Research Society 2002

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