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Characterization of Defects Generated During Boron Diffusion in SiC

Published online by Cambridge University Press:  15 March 2011

Xue-feng Lin ,
Stephen P. Smith ,
Xianyun Ma ,
Liang Wang ,
Tangali S. Sudarshan ,
Qingchun Zhang  and
Hsueh-Rong Chang
Xue-feng Lin
Affiliation:
Charles Evans & Associates, 810 Kifer Road, Sunnyvale, CA 94086
Stephen P. Smith
Affiliation:
Charles Evans & Associates, 810 Kifer Road, Sunnyvale, CA 94086
Xianyun Ma
Affiliation:
Electrical Engineering Dept., Univ. of South Carolina, Main St. 301, Columbia, SC 29208
Liang Wang
Affiliation:
Electrical Engineering Dept., Univ. of South Carolina, Main St. 301, Columbia, SC 29208
Tangali S. Sudarshan
Affiliation:
Electrical Engineering Dept., Univ. of South Carolina, Main St. 301, Columbia, SC 29208
Qingchun Zhang
Affiliation:
Electronics Division, Rockwell Scientific, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
Hsueh-Rong Chang
Affiliation:
Electronics Division, Rockwell Scientific, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
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Abstract

The defects associated with the implantation and diffusion of boron in silicon carbide have been studied using secondary ion mass spectrometry (SIMS) and photoluminescence (PL) imaging and spectroscopy. An n-type epitaxial SiC (1000) substrate was implanted with 2×1014 atoms/cm2 B and annealed to 1700°C. PL data was acquired before and after annealing, and following removal of various thicknesses of the sample by mechanical polishing. Thermal annealing generated a B diffusion profile measured by SIMS to extend to about 3 microns depth. After removing the diffused B layer, a PL spectral feature at 415nm disappeared, which is consistent with its previous identification as arising from donor-acceptor pairs (DAP). The D1 spectral features survived polishing, supporting previous suggestions that these features are intrinsic defects due to the di-interstitial (Ic-Ic or Isi-Isi) or di-vacancy (Vc-Vc or Vsi-Vsi) defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J5.26
Copyright
Copyright © Materials Research Society 2004

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