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Characterization of Defects in CZ-grown Si Crystals with OSF Ring

Published online by Cambridge University Press:  03 September 2012

Satoshi Ogushi ,
Masataka Hourai  and
Tatuhiko Shigematsu
Satoshi Ogushi
Affiliation:
Kyushu Electronic Metal Corporation, Semiconductor Research Laboratory, 2201 Kouhoku, Kishima, Saga 849–05
Masataka Hourai
Affiliation:
Kyushu Electronic Metal Corporation, Semiconductor Research Laboratory, 2201 Kouhoku, Kishima, Saga 849–05
Tatuhiko Shigematsu
Affiliation:
Kyushu Electronic Metal Corporation, Semiconductor Research Laboratory, 2201 Kouhoku, Kishima, Saga 849–05
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Abstract

The nature and radial distribution of crystallographic micro-defects in CZ-grown silicon crystal wafers which exhibit OSF ring were investigated. With the difference in copper decoration XRT image and in temperature dependence of oxgen precipitation, four coaxial ring regions were clearly identified. In the OSF ring region, oxgen precipitation takes place even at relatively high temperatures around 1, 100°C. Gold diffusion experiments were also carried out, for which the ‘kick-out mechanism’ was considered to reveal the density distribution of sinks for interstitial silicon. A semi-quantitative schematic model describing the density distribution of the precipitation nuclei as a function of critical size of the nuclei for each of the four ring regions is derived. The nuclei that are stable at high temperature act as sinks for interstitial silicon atoms, generating stacking faults.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 37
Copyright
Copyright © Materials Research Society 1992

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References

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