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Characterization of Defects in Proton-ImplantedGaAs

Published online by Cambridge University Press:  25 February 2011

H. A. Jenkinson ,
G. N. Maracas ,
M. O'Tooni  and
R. G. Sarkis
H. A. Jenkinson
Affiliation:
U. S. Army Armaments Research and Development Center, Dover, NJ 07801-5001
G. N. Maracas
Affiliation:
Arizona State University, Center for Solid State Electronics Research, Tempe, AZ 85287
M. O'Tooni
Affiliation:
U. S. Army Armaments Research and Development Center, Dover, NJ 07801-5001
R. G. Sarkis
Affiliation:
U. S. Army Armaments Research and Development Center, Dover, NJ 07801-5001
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Abstract

Studies have been made of n+-GaAs implanted with 300 keV protonsto fluences of 1014−1016/cm2. Electricalstudies included I–V analysis, DLTS, and thermally stimulated currentmeasurements made on implanted FET-like structures fabricated from MBE GaAsepi-layers. Optical infrared reflectance spectra and high resolutiontransmission electron micrographs were obtained for as-implanted materialand for specimens annealed at 300 °C and 500 °C. Results show as-implantedmaterial can be characterized by a band of traps lying about 0.2 eV belowthe conduction band with a relatively uniform distribution throughout theimplanted region. Thermal processing causes a significant alteration in thedensity and distribution of these defects.

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References

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