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Characterization Of sic Layer Formed by C Ion Implantation ( ESR And IR Studies)

Published online by Cambridge University Press:  21 February 2011

Y. Show ,
T. Izumi ,
M. Deguchi ,
M. Kitabatake  and
T. Hirao
Y. Show
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12, Japan
T. Izumi
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12, Japan
M. Deguchi
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12, Japan
M. Kitabatake
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12, Japan
T. Hirao
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12, Japan
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Abstract

Characterization of C ion implanted silicon layers were performed by fourier transformation infrared ( FT-IR ) spectroscopy and electron spin resonance ( ESR ) methods. Microcrystalline β-SiC including amorphous Si are formed in the Si surface region by annealing at 1200 °C following hot ( 450 °C ) implantation. The ESR analysis revealed the presence of two kinds of defect centers in SiC layer formed by implantation, i.e. Si dangling bond ( g=2.0060, ΔHpp=6 Oe) in the amorphous Si and Si dangling bond with C atom neighbors ( g=2.0032, ΔHpp=3 Oe). Heating substrate during implantation prevents the formation of carbon clusters on the Si surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 723
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Borders, J. A., Picraux, S. T. and Beezhold, W. ; App1. Phys. Lett., 18, 509 (1971)Google Scholar
[2] Deguchi, M., Yoshida, A., Kitagawa, M. and Hirao, T.; Jpn. J. Appl. Phys., 29, L1493(1990)Google Scholar
[3] P Martin, Baudin, B., Dupuy, M., Ermolieff, A., Olivier, M., Papon, A. M. and Rolland, G.; J. Appl. Phys., 67, 2908 (1990)Google Scholar
[4] Deguchi, M., Kitabatake, M., Hirao, T., Arai, N. and Izumi, T. ; Jpn. J. Appl. Phys., 31, 343 (1992)Google Scholar
[5] Shimizu, T., Kumeda, M. and Kiriyama, Y.; Solid. State. Commun., 37, 699 (1981)Google Scholar
[6] O'Raifertaigh, C., Barklie, R. C., Reeson, K. and Hemment, P. L. F.; Semicond. Sci. Technol., 5, 78 (1990)Google Scholar
[7] Spitzer, W. G., Kleinman, D. A. and Frosch, C. J.;Phys. Rev., 113, 127 (1959)Google Scholar
[8] Spitzer, W. G., Kleinman, D. A. and Frosch, C. J. Phys. Rev., 113, 133 (1959)Google Scholar
[9] Crowder, B. L., Title, R. S., Brodsky, M. H. and Pettit, G. D.; Appl. Phys. Lett., 16, 205 (1970)Google Scholar
[10] Wagner, G. W., Na, B. and Vannice, A.; J. Phys. Chem., 93, 5061 (1989)Google Scholar
[11] Minagawa, H., Vina, R. O., Kadowaki, T., Mizuno, S., Tochihara, H., Hayakawa, K.; Jpn. J. Appl. Phys., 31, L1707(1992)Google Scholar