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Characterization of Structural Changes and Defects in Ion Bombarded GaAs

Published online by Cambridge University Press:  26 February 2011

Stephen T. Johnson ,
J.S. Williams ,
R.G. Elliman ,
A.P. Pogany ,
E. Nygren  and
G.L. Olson
Stephen T. Johnson
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne, 3000, Australia
J.S. Williams
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne, 3000, Australia
R.G. Elliman
Affiliation:
CSIRO, Division of Chemical Physics, Clayton 3168, Australia.
A.P. Pogany
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne, 3000, Australia
E. Nygren
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne, 3000, Australia
G.L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA, USA.
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Abstract

In-situ time resolved reflectivity, Rutherford backscattering and channeling and transmission electron microscopy have been employed to characterise the evolution of Ar+ ion implantation damage in GaAs as a function of ion dose at various irradiation temperatures. Specific reflectivity signatures have been identified and characterised in terms of observed structural changes to the GaAs. Reflectivity provides a simple and convenient means of monitoring damage build up during ion implantation. In contrast to accepted models for amorphous phase formation in semiconductors, GaAs has been observed to undergo a sudden transformation from a crystal containing a dense network of extended defects to an amorphous phase under elevated temperature irradiation conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 127
Copyright
Copyright © Materials Research Society 1987

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References

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