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Characterization of the DFZ in Silicon Wafers by a Non-Destructive Technique

Published online by Cambridge University Press:  25 February 2011

J. M. Borrego ,
R. J. Gutmann ,
N. Jensen ,
C. S. Lo  and
O. Paz
J. M. Borrego
Affiliation:
Electrical, Computer, and Systems Engineering Rensselaer Polytechnic Institute Troy, New York 12181
R. J. Gutmann
Affiliation:
Electrical, Computer, and Systems Engineering Rensselaer Polytechnic Institute Troy, New York 12181
N. Jensen
Affiliation:
Electrical, Computer, and Systems Engineering Rensselaer Polytechnic Institute Troy, New York 12181
C. S. Lo
Affiliation:
Electrical, Computer, and Systems Engineering Rensselaer Polytechnic Institute Troy, New York 12181
O. Paz
Affiliation:
International Business Machine Corporation East-Fishkill Facility, Route 52 Hopewell Junction, New York 12533
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Abstract

This paper presents a non-destructive technique for characterizing The Defect Free Zone (DFZ) of silicon wafers. The method consists in measuring the decay of microwave reflection following the creation of excess carriers by a light pulse. For wafers with similar surface passivation we have found a direct correlation between the transient duration and the size of the DFZ. A computer model of the microwave reflection in silicon wafers with different size of DFZ agrees with experimental observation.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 373
Copyright
Copyright © Materials Research Society 1986

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References

[1] Paz, O. and Schneider, C. P., IEEE Trans. on Elec. Dev., ED–32, 2830, (1985)CrossRefGoogle Scholar
[2] Borrego, J. M. et al submitted for publication.Google Scholar
[3] Hwang, J. M., Schroder, D. K. and Goodman, A. M., IEEE Elec. Dev. Lett. EDL–7, 172, (1986).CrossRefGoogle Scholar
[4] Collins, R. E., Foundations for Microwave Engineering, 1st. ed. (Mc-Graw Hill Book Co., New York 1966) p. 237.Google Scholar
[5] Lo, S. C. et al to be published.Google Scholar