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Characterization of Ultra-Fast Phase Change Optical Disk with GaSb Material

Published online by Cambridge University Press:  01 February 2011

Kazunori Ito ,
Hiroko Tashiro ,
Makoto Harigaya ,
Eiko Suzuki ,
Katsuhiko Tani ,
Noriyuki Yiwata ,
Nobuaki Toyoshima ,
Akiko Kitano  and
Kenichi Kato
Kazunori Ito
Affiliation:
Optical Memory R&D Center, RICOH COMPANY, Ltd.
Hiroko Tashiro
Affiliation:
Optical Memory R&D Center, RICOH COMPANY, Ltd.
Makoto Harigaya
Affiliation:
Optical Memory R&D Center, RICOH COMPANY, Ltd.
Eiko Suzuki
Affiliation:
Optical Memory R&D Center, RICOH COMPANY, Ltd.
Katsuhiko Tani
Affiliation:
Research & Development Center, RICOH COMPANY, Ltd.
Noriyuki Yiwata
Affiliation:
Research & Development Center, RICOH COMPANY, Ltd.
Nobuaki Toyoshima
Affiliation:
Research & Development Center, RICOH COMPANY, Ltd.
Akiko Kitano
Affiliation:
Japan Synchrotron Radiation Research Institute (JASRI)
Kenichi Kato
Affiliation:
Japan Synchrotron Radiation Research Institute (JASRI)
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Abstract

We studied the crystallization mechanism of ultra-fast phase change optical disks with recording layers made of GaSb material for digital versatile disk (DVD) systems. The results of a static recording test and an amorphous mark formation simulation suggest that GaSb maintains a high crystal growth rate even at temperatures 150 degrees lower than the material's melting point. Disks with recording layers made of this material have a write speed margin ranging from DVD 3× to 8× or more.

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References

REFERENCES

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