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Charge Injection into Bottom-Contact Pentacene Thin-Film Transistors

Published online by Cambridge University Press:  01 February 2011

Yi Hong ,
Feng Yan ,
Piero Migliorato ,
S H Han  and
Jin Jang
Yi Hong
Affiliation:
yh236@cam.ac.uk, Electrical Engineering Division, Engineering Department, University of Cambridge, 9, JJ Thomson Avenue, Cambridge, N/A, CB3 0FA, United Kingdom
Feng Yan
Affiliation:
feng.yan@npl.co.uk, University of Cambridge, Engineering Department, Cambridge, N/A, CB3 0FA, United Kingdom
Piero Migliorato
Affiliation:
pm@eng.cam.ac.uk, University of Cambridge, Engineering Department, Cambridge, N/A, CB3 0FA, United Kingdom
S H Han
Affiliation:
shhan@tftlcd.khu.ac.kr, Kyung Hee University, Advanced Display Research Center, Seoul, N/A, 130-701, Korea, Republic of
Jin Jang
Affiliation:
jjang@khu.ac.kr, Kyung Hee University, Advanced Display Research Center, Seoul, N/A, 130-701, Korea, Republic of
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Abstract

We investigate the contact of bottom-contact pentacene-based thin-film transistors, with Au source/drain electrode. By separating the voltage drop at the contact from the source-drain voltage, the current-voltage characteristic of the injection contact is obtained. The contact characteristics are in a good agreement with a model of carrier injection from a metal electrode into a disordered hopping system.

Keywords

organicdevicesAu
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 937: Symposium M – Conjugated Organic Materials – Synthesis, Structure, Device, and Applications , 2006 , 0937-M07-29
Copyright
Copyright © Materials Research Society 2006

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