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The Chemical Etch of Tungsten Single Crystals and Foils With XeF2

Published online by Cambridge University Press:  28 February 2011

A. Bensaoula ,
J. Stozier ,
A. Ignatiev  and
J. Wolfe
A. Bensaoula
Affiliation:
University of Houston, Houston, Texas 77004.
J. Stozier
Affiliation:
University of Houston, Houston, Texas 77004.
A. Ignatiev
Affiliation:
University of Houston, Houston, Texas 77004.
J. Wolfe
Affiliation:
University of Houston, Houston, Texas 77004.
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Abstract

The chemical etching of W(100) single crystals and polycrystalline tungsten foils using a XeF2 molecular beam has been studied with and without simultaneous bombardment by energetic inert ions.The surface fluorine concentration, measured under different XeF2 pressures (10−7 to 10−5 torr) and ion current densities, is found to be always less than a monolayer.Depth profiles of the fluorine layer show that in both single crystal and poly samples, the fluorine is surface localized, although slightly deeper in the W(100).A kinetic model is presented to account for the enhanced etching under ion bombardment.The mechanism proposed is mainly a defect driven enhancement of the etch yield.This model is consistent with both the fluorine concentrations measured in this work as well as the etch product yields reported by Winters.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 429
Copyright
Copyright © Materials Research Society 1986

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