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Chemical Tension in VLS Nanostructure Growth Process: From Nanohillocks to Nanowires

  • Na Li (a1), Teh Y. Tan (a2) and Ulrich Gösele (a3)
Abstract

ABSTRACT

We formulate a global equilibrium model to describe the growth of 1-d nanostructures in the VLS process by including also the chemical tension in addition to the physical tensions. The chemical tension derives from the Gibbs free energy release due to the growth of a crystal layer. The system global equilibrium is attained via the balance of the static physical tensions and the dynamic chemical tension, which allows the system to reach the minimum Gibbs free energy state. The model predicts, and provides conditions for the growth of nanowires of all sizes exceeding a lower thermodynamic limit. The model also predicts the conditions distinguishing the growth of nanaohillocks from nanowires.

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References
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1.Givargizov, E. I., Highly Anisotropic Crystals, D. Reidel Publishing Company, 1987, Chapter 2.
2.Schmidt, V., Senz, S. and Goesele, U., Appl. Phys. A 80, 445 (2005).
3.Dietrich, S., private communication.
4.The Collected Works of J. Willard Gibbs (Logmans, Green and Co., New York, 1928), p. 290 and the associated materials.
5.Guzzardi, L., Rosso, R., and Virga, E. G., Phys. Rev. E73, art. # 021602 (Feb, 2006).
6.Tan, T. Y., Li, N., and Gösele, U., Appl. Phys. Lett. 83, 11991201 (2003); Appl. Phys. A78, 519-526 (2004).
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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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