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Chemical Transport Deposition of Purified Poly-Si Films from Metallurgical-grade Si Using Subatmospheric-pressure H2 Plasma

Published online by Cambridge University Press:  01 February 2011

Kiyoshi Yasutake ,
Hiromasa Ohmi  and
Hiroaki Kakiuchi
Kiyoshi Yasutake
Affiliation:
yasutake@prec.eng.osaka-u.ac.jp, Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Japan
Hiromasa Ohmi
Affiliation:
ohmi@prec.eng.osaka-u.ac.jp, Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Japan
Hiroaki Kakiuchi
Affiliation:
kakiuchi@prec.eng.osaka-u.ac.jp, Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka, Japan
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Abstract

Purified Si film is prepared directly from metallurgical-grade Si (MG-Si) by chemical transport using subatmospheric-pressure H2 plasma. The purification mechanism is based on the selective etching of Si by atomic H. Since most metals are not etched by H, this process is efficient to reduce metal impurities in Si films. It is demonstrated that the concentrations of most metal impurities (Fe, Mn, Ti, Co, Cr, Ni, etc.) in the prepared Si film are in the acceptable range for applying it to solar-grade Si (SOG-Si) material, or below the determination limit of the present measurements. On the other hand B and P atoms, which make volatile hydrogen compounds such as B2H6 and PH3, are difficult to eliminate by the present principle. From the infrared absorption measurements of the etching product produced by the reaction between H2 plasma and MG-Si, it is found that the main etching product is SiH4. Therefore, a remote-type chemical transport process is possible to produce SiH4 gas directly from MG-Si. Combining other purifying principle (such as a pyrolysis filter), this process may have an advantage to eliminate B2H6 and PH3 from the produced SiH4 gas.

Keywords

Siplasma depositionpurification
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A10-01
Copyright
Copyright © Materials Research Society 2010

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