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Cluster-Tool Integrated HF Vapor Etching for Native Oxide Free Processing

Published online by Cambridge University Press:  21 February 2011

Chris Werkhoven ,
Ernst Granneman ,
Loek Kwakman ,
Menso Hendriks ,
Steven Verhaverbeke ,
Marc Heyns  and
Hugo Bender
Chris Werkhoven
Affiliation:
ASM International, Rembrandtlaan 2A, 3723 BJ Bilthoven, The Netherlands
Ernst Granneman
Affiliation:
ASM International, Rembrandtlaan 2A, 3723 BJ Bilthoven, The Netherlands
Loek Kwakman
Affiliation:
ASM International, Rembrandtlaan 2A, 3723 BJ Bilthoven, The Netherlands
Menso Hendriks
Affiliation:
IMEC v.z.w., Kapeldreef 75, B-3001, Leuven, Belgium
Steven Verhaverbeke
Affiliation:
IMEC v.z.w., Kapeldreef 75, B-3001, Leuven, Belgium
Marc Heyns
Affiliation:
IMEC v.z.w., Kapeldreef 75, B-3001, Leuven, Belgium
Hugo Bender
Affiliation:
IMEC v.z.w., Kapeldreef 75, B-3001, Leuven, Belgium
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Abstract

Three regimes of HF-H2O vapor etching of oxide can be distinguished, viz. a gas phase, an adsorption and a condensation regime with gas phase etching behaving distinctily different in terms of etch rate and surface passivation properties. Integration of a vapor etch process in a vacuum-controlled, leak-tight cluster tool equipped with vertical reactor LPCVD and oxidation modules offers important thin film interface engineering capabilities; significant process control improvement is achievable in critical device technologies, such as formation of poly-contacts, poly-emitters and NO capacitors.

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References

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