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Combinatorial optimization of atomically controlled growth for oxide films by the carrousel type laser molecular beam epitaxy

Published online by Cambridge University Press:  17 March 2011

R. Takahashi
Affiliation:
Materials and Structures Laboratory and Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
Y. Matsumoto
Affiliation:
Materials and Structures Laboratory and Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
H. Koinuma
Affiliation:
Materials and Structures Laboratory and Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
M. Lippmaa
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
M. Kawasaki
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
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Abstract

A new combinatorial pulsed laser deposition system has been developed for rapid optimization of epitaxial growth process by using a carrousel type masking plate. Under in-situ monitoring of growing surface with reflection high energy electron diffraction, eight films with different compositions or preparation parameters can be fabricated on a single substrate. By using this system, we have succeeded in the one lot optimization of YBa2Cu3O7-d(YBCO), PrGaO3, SrO and BaO film growths on the B-site (TiO2) terminated SrTiO3(001) substrates. Key results from these experiments include the high sensitivity of YBCO film crystallinity to the laser focusing as well as of growth behavior of epitaxial SrO and BaO films to the crystal habit with the underlying atomic layers.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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