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Combinatorial Studies of Switching and Solid-Phase Crystallization in Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

Paul Stradins ,
Howard M. Branz ,
Jian Hu ,
Scott Ward  and
Qi Wang
Paul Stradins
Affiliation:
pauls_stradins@nrel.gov, NREL, 1617 Cole Blvd., Golden, CO, 80401, United States
Howard M. Branz
Affiliation:
howard_branz@nrel.gov, National Renewable Energy Laboratory, United States
Jian Hu
Affiliation:
jhu@mvsystemsinc.com, National Renewable Energy Laboratory, United States
Scott Ward
Affiliation:
scott_ward@nrel.gov, National Renewable Energy Laboratory, United States
Qi Wang
Affiliation:
qi_wang@nrel.gov, National Renewable Energy Laboratory, United States
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Abstract

Combinatorial approaches are successfully applied for the optimization of electric write-once, thin-film Si antifuse memory devices, as well as for studying the solid-phase epitaxy kinetics of amorphous silicon on c-Si. High forward, low reverse current thin film Si diode deposition recipes are selected using cross-strips of different combinations of amorphous and microcrystalline doped layers, as well as a thickness-wedged intrinsic a-Si:H buffer layer. By studying switching in thickness-wedged a-Si:H layers, it is found that switching requires both a critical field and a critical bias voltage across the metallic contacts. Solid-phase epitaxy speed has a non-linear dependence on the film thickness, which is easily observed by optical image monitoring and analysis in wedged a-Si:H films on c-Si wafers.

Keywords

combinatorial synthesismemorySi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 894: Symposium LL – Combinatorial Methods and Informatics in Materials Science , 2005 , 0894-LL02-01
Copyright
Copyright © Materials Research Society 2006

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References

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