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Comparison between SiO2 Films and Nitridated Oxides in N2O Ambient in Terms of Bulk/Interface Trapping Properties

Published online by Cambridge University Press:  22 February 2011

Constantin Papadas  and
Patrick Mortini
Constantin Papadas
Affiliation:
SGS—Thomson Microelectronics, Central R&D Labs, B.P. 16, 38921 Crolles, France
Patrick Mortini
Affiliation:
SGS—Thomson Microelectronics, Central R&D Labs, B.P. 16, 38921 Crolles, France
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Abstract

The necessity of employing nitridation process in advanced technologies will be underlined. The different technological alternatives for preparing oxinitride layers will be traced back, followed by a review of the methods currently available for assessing the degradation features of the Si/SiO2 system. Furthermore, comparison between pure SiO2 layers and nitridated films in N2O ambient will be conducted in terms of bulk/interface trapping properties and the obtained physical degradation data will be correlated with classical reliability results. Large emphasis will be given on the trapping properties of tunnel oxides used in non—volatile memory arrays and different technological alternatives will be exploited (i.e. Rapid Thermal Nitridation, Furnace Nitridation). In addition, a similar analysis will be carried out for gate oxides. Finally, some guidelines concerning the optimum selection of the furnace nitridation conditions will be given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 13
Copyright
Copyright © Materials Research Society 1994

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References

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