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Comparison of High Field Characteristics of SiO2 and AIN Gate Insulators in 6H SiC MOS Capacitors

Published online by Cambridge University Press:  10 February 2011

V. P. Madangarli ,
T. S. Sudarshan  and
C. C. Tin
V. P. Madangarli
Affiliation:
Dept. of Electrical and Computer Engg., University of South Carolina, Columbia, SC 29208
T. S. Sudarshan
Affiliation:
Dept. of Electrical and Computer Engg., University of South Carolina, Columbia, SC 29208
C. C. Tin
Affiliation:
Department of Physics, Auburn University, Alabama, AL 36849
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Abstract

Using a fast ramp response technique, the high field characteristics, specifically the breakdown strength, of thermally grown silicon-dioxide (SiO2) and MOCVD grown aluminum-nitride (AIN), on n-type 6H-SiC epilayers is obtained as a function of three different processing conditions for the insulator growth. Significant improvement in the breakdown strength of thermally grown SiO2 after a 30 minute post annealing at 400°C in nitrogen ambient is reported. Further, the influence of temperature profile during the AIN growth on the breakdown strength is reported.

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References

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