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Comparison of Ru/Ta and Ru/TaN as Barrier Stack for Copper Metallization

Published online by Cambridge University Press:  01 February 2011

Xin-Ping Qu ,
Jing-Jing Tan ,
Mi Zhou ,
Tao Chen ,
Guo-Ping Ru  and
Bing-Zong Li
Xin-Ping Qu
Affiliation:
xpqu@fudan.edu.cn, Fudan University, Department of microelectronics, Dept. of microelectronics,, 220#, Handan Road,, Fudan University, Shanghai, 200433, Shanghai, Shanghai, 200433, China, People's Republic of, 86-21-65643561, 86-21-65643768
Jing-Jing Tan
Affiliation:
042052023@fudan.edu.cn, Fudan University, Department of microelectronics, Dept. of microelectronics,, 220#, Handan Road,, Shanghai, 200433, China, People's Republic of
Mi Zhou
Affiliation:
052052022@fudan.edu.cn, Fudan University, Department of microelectronics, Dept. of microelectronics,, 220#, Handan Road,, Shanghai, 200433, China, People's Republic of
Tao Chen
Affiliation:
052021066@fudan.edu.cn, Fudan University, Department of microelectronics, Dept. of microelectronics,, 220#, Handan Road,, Shanghai, 200433, China, People's Republic of
Guo-Ping Ru
Affiliation:
gpru@fudan.edu.cn, Fudan University, Department of microelectronics, Dept. of microelectronics,, 220#, Handan Road,, Shanghai, 200433, China, People's Republic of
Bing-Zong Li
Affiliation:
bzli@fudan.edu.cn, Fudan University, Department of microelectronics, Dept. of microelectronics,, 220#, Handan Road,, Shanghai, 200433, China, People's Republic of
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Abstract

The diffusion barrier properties for ultrathin Ru/Ta and Ru/TaN bilayer structure as the copper diffusion barrier are compared. Cu, Ru, Ta and TaN thin films are deposited by using the ion beam sputtering technique. The experimental results show that the thermal stability of the Cu/Ru/Ta or TaN /Si structure is much more improved than that of the Cu/Ru/Si structure without the interlayer. However, the Cu/Ru/TaN/Si shows better thermal stability than the Cu/Ru/Ta/Si structure, which should be attributed to the amorphous nature of the TaN interlayer. The microstructure evolution of the Cu/Ru/Ta (TaN)/Si structure during annealing is discussed. The results show that the Ru/TaN bilayer can be a very promising diffusion barrier in the future seedless Cu interconnect technology.

Keywords

barrier layerRuCu
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F09-02
Copyright
Copyright © Materials Research Society 2006

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