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Comparison of Short Time Annealing of Implanted Silicon Layers With Tungsten-Halogen Lamp and Mercury Arc Lamp Sources

Published online by Cambridge University Press:  26 February 2011

D. Wouters ,
D. Avau ,
P. Mertens  and
H. E. Maes
D. Wouters
Affiliation:
IMEC Kapeldreef 75 B-3030 Heverlee, Belgium
D. Avau
Affiliation:
IMEC Kapeldreef 75 B-3030 Heverlee, Belgium
P. Mertens
Affiliation:
IMEC Kapeldreef 75 B-3030 Heverlee, Belgium
H. E. Maes
Affiliation:
IMEC Kapeldreef 75 B-3030 Heverlee, Belgium
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Abstract

Short time anneal (STA) experiments were performed in a specially designed system which uses either a bank of Tungsten-Halogen lamps or a moving Mercury arc lamp as the light source. Both STA results were compared with conventional furnace anneal. The Mercury arc lamp anneal is found to be a critical process but optimization for wafer damage free conditions can be achieved. The anneals result in general in a better profile control which is most outspoken for shallow Boron implants while the electrical activation is comparable for all elements to that obtained with Tungsten-Halogen or furnace anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 217
Copyright
Copyright © Materials Research Society 1986

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References

[1] Stultz, T.J., Sturm, J., Gibbons, J.I. and Ichiki, S.K., J. Appi. Phys. 53, 7109 (1982).CrossRefGoogle Scholar
[2] Wouters, D., Mertens, P. and Maes, H.E., to be published in the Proceedings of the ESPRIT Technical Week (1985).Google Scholar
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