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A Comparison of the Diffusivity of As and Ge in Si at high Donor Concentrations

Published online by Cambridge University Press:  25 February 2011

K. Kyllesbech Larsen ,
P. Gaiduk  and
A. Nylandsted Larsen
K. Kyllesbech Larsen
Affiliation:
Institute of Physics, University of Aarhus, DK-8000, Aarhus C, Denmark
P. Gaiduk
Affiliation:
Institute of Physics, University of Aarhus, DK-8000, Aarhus C, Denmark
A. Nylandsted Larsen
Affiliation:
Institute of Physics, University of Aarhus, DK-8000, Aarhus C, Denmark
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Abstract

The effect of high background doping (8×1019 - 5×1020 cm-3 ) on the diffusion of Ge and As in Si has been studied. A strong enhancement is found for As for donor concentrations higher than ~2×1020 cm-3 , but not for Ge. These experimental findings are discussed within the percolation model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 601
Copyright
Copyright © Materials Research Society 1990

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References

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