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Comparison of the Electromigration Behavior of Al(MgCu) with Al(Cu) and Al(SiCu)

Published online by Cambridge University Press:  10 February 2011

Hua Li ,
Ann Witvrouw ,
Sing Jin ,
Hugo Bender ,
Karen Maex  and
Ludo Froyen
Hua Li
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Ann Witvrouw
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Sing Jin
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Hugo Bender
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Karen Maex
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Ludo Froyen
Affiliation:
Dept.of Metallurgy and Materials Engineering, K.U. Leuven, de Croylaan 2, 3001 Leuven, Belgium
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Abstract

Mg is one of the elements that are regarded as having a beneficial effect on the Al electromigration (EM) lifetime. In this paper, we compare the EM behavior of 0.4 μm wide passivated Al-1%Mg-0.5%Cu, Al-0.5%Cu and Al-l%Si-0.5%Cu lines. Plan-view transmission electron microscopy and focused ion beam imaging reveal that Al(MgCu) film undergoes bimodal grain growth. Auger electron spectroscopy and secondary ion mass spectrometry show a strong surface segregation and a severe bulk depletion of Mg. Additionally the line-width dependence of the rate of the resistivity decay during aging shows also a different behavior for Al(MgCu) compared to Al(Cu) and Al(SiCu). All these findings are consistent with the EM results that Al(MgCu), processed with our experimental conditions, has both the lowest median time to failure and deviation in time to failure. The results are discussed in the light of the effect of Mg addition on the microstructure and of the great surface activity of Mg.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 133
Copyright
Copyright © Materials Research Society 1998

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References

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