Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T04:55:02.083Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison of Trapping States at SiO2/Si Interfaces on si(100), (110), and (111) Prepared by Plasma-Assisted Oxidation and Oxide Deposition, and by Exposure to Atomic H Prior to Oxidation and Deposition

Published online by Cambridge University Press:  03 September 2012

T. Yasuda ,
Y. Ma ,
S. Habermehl  and
G. Lucovsky
T. Yasuda
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
Y. Ma
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
S. Habermehl
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
Get access

Abstract

S1O2 layers, ∼ 15 nm thick, were formed on Si (100), (110), and (111) surfaces by a low-temperature, 200–300°C, plasma-assisted oxidation/deposition process sequence. The distribution of the trap density at the S1O2/Si interface, and in the Si band-gap, Dit, was deduced from capacitance-voltage, C-V, measurements. The values of Dit at midgap varied with crystal orientation in a similar way as in thermally grown oxides. In addition, the low-temperature oxides displayed a characteristic and intrinsic dangling bond state, the so-called Pb center, at ∼0.3 eV above the Si valence-band edge. Samples exposed to atomic H prior to the oxidation and deposition steps, showed an increase in Dit due to a roughening of the Si surfaces, which produced additional broad bands of defect states, at ∼0.5 and ∼0.7 eV above the Si valence-band edge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 473
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Nicollian, E. H. and Brews, J. R., MOS (Metal Oxide Semiconductor) Physics and Technology (John Wiley & Sons, New York, 1982).Google Scholar
[2] Deal, B. E., J. Electrochem. Soc. 121, 198. (1974).CrossRefGoogle Scholar
[3] Yasuda, T., Ma, Y., Habermehl, S., and Lucovsky, G., Appl. Phys. Lett., 60, 434 (1992);, MRS Symp. Proc. 238 (1992) to be published.CrossRefGoogle Scholar
[4] Yasuda, T., Ma, Y., Habermehl, S., Kim, S. S., Lucovsky, G., Schneider, T. P., Cho, J., and Nemanich, R. J., MRS Symp. Proc. 202, 395 (1991).CrossRefGoogle Scholar
[5] Lucovsky, G., Tsu, D. V., Rudder, R. A., and Markunas, R. J., Thin Film Processes II, edited by Vossen, J. L. and Kern, W. (Academic Press, San Diego, 1991), p. 565.CrossRefGoogle Scholar
[6] Schneider, T. P., Cho, J., Vander Weide, J., Wells, S. E., Lucovsky, G., Nemsnich, R. J., Mantini, M. J., Rudder, R. A., and Markunas, R. J., MRS Symp. Proc. 204, 333. (1991).CrossRefGoogle Scholar
[7] He, S. S., Stephens, D. J., Ma, Y., Yasuda, T., Habermehl, S., and Lucovsky, G., MRS Symp. Proc. 262 (1992) to be published.CrossRefGoogle Scholar
[8] Poindexter, E. H., Gerardi, G. J., Rueckel, M. -E., Caplan, P. J., Johnson, N. M., and Biegelsen, D. K., J. Appl. Phys. 56, 2844. (1984);CrossRefGoogle Scholar
Gerardi, G. J., Poindexter, E. H., Caplan, P. J., and Johnson, N. M., Appl. Phys. Lett., 49, 348. (1986).CrossRefGoogle Scholar
[9] Johnson, N. M., Biegelsen, D. K., Moyer, M. D., Cheng, S. T., Poindexter, E. H., Caplan, P. J., Appl. Phys. Lett., 43, 563. (1983).CrossRefGoogle Scholar
[10] Ma, Y., Yasuda, T., Bjorkman, C. H. and Lucovsky, G., J. Vac. Sci. Technol, A10 (1992) to be published.Google Scholar
[11] Lucovsky, G. and Lin, S. Y., AIP Conf. Proc. 120, 55 (1984).CrossRefGoogle Scholar
[12] Higashi, G. S., Chabal, Y. J., Trucks, G. W., and Raghavachari, K., Appl. Phys. Lett., 56, 656. (1990).CrossRefGoogle Scholar
[13] Ma, Y., Yasuda, T., Habermehl, S., He, S. S., Stephens, D. J., and Lucovsky, G., MRS Symp. Proc. 259 (1992) to be published.CrossRefGoogle Scholar