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Complementary Resistive Switches (CRS): High speed performance for the application in passive nanocrossbar arrays

Published online by Cambridge University Press:  23 June 2011

Roland Rosezin ,
Eike Linn ,
Lutz Nielen ,
Carsten Kügeler ,
Rainer Bruchhaus  and
Rainer Waser
Roland Rosezin
Affiliation:
Peter Grünberg Institut, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany and JARA – Fundamentals for Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Eike Linn
Affiliation:
Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen, 52074 Aachen, Germany
Lutz Nielen
Affiliation:
Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen, 52074 Aachen, Germany
Carsten Kügeler
Affiliation:
Peter Grünberg Institut, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany and JARA – Fundamentals for Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Rainer Bruchhaus
Affiliation:
Peter Grünberg Institut, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany and JARA – Fundamentals for Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Rainer Waser
Affiliation:
Peter Grünberg Institut, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany and JARA – Fundamentals for Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen, 52074 Aachen, Germany
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Abstract

In this report, the fabrication and electrical characterization of fully vertically integrated complementary resistive switches (CRS), which consist of two anti-serially connected Cu-SiO2 memristive elements, is presented. The resulting CRS cells are initialized by a simple procedure and show high uniformity of resistance states afterwards. Furthermore, the CRS cells show high switching speeds below 50 ns, making them excellent building blocks for next generation non-volatile memory based on passive nanocrossbar arrays.

Keywords

thin filmelectrical propertieslayered

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References

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