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Composition and Structure of Spark Eroded Porous Silicon

Published online by Cambridge University Press:  28 February 2011

R. E. Hummel ,
S.-S. Chang ,
M. Ludwig  and
A. Morrone
R. E. Hummel
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
S.-S. Chang
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
M. Ludwig
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
A. Morrone
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
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Abstract

Porous silicon which has been prepared by a “dry” technique, that is, by spark erosion, yields similar photoluminescence spectra as anodically etched porous silicon which has been prepared in aqueous solutions. Fourier transform infrared spectra reveal that the dominant features in spark eroded silicon are the Si-O-Si stretching mode and the Si-O-Si bending mode. No infrared vibrational modes characteristic for siloxene have been found in spark eroded Si. Results from X-ray and electron diffraction studies suggest that spark eroded Si involves minute polycrystalline silicon particles which are imbedded in an amorphous matrix.

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References

REFERENCES

[1] Hummel, R.E. and Chang, S.-S., Appl. Phys. Lett. 61, 1965 (1992).Google Scholar
[2] Fuchs, H.D., Brandt, M.S., Stutzmann, M., and Weber, J., Mat. Res. Soc. Symp. Proc. 256, 159 (1992).Google Scholar
[3] Brandt, M.S., Fuchs, H.D., Stutzmann, M., Weber, J., and Cardona, M., Solid State Comm. 81, 307 (1992).Google Scholar
[4] Ubara, H., Imura, T., Hiraki, A., Hirabayashi, I., and Morigaki, K., J. Non-Cryst. Solids 59/60, 641 (1983).Google Scholar
[5] Cardona, M., Phys. Stat. Sol. (B) 118, 463 (1983).Google Scholar
[6] Lucovsky, G. and Pollard, W.B., in Hydrogenated Amorphous Silicon II, edited by Joannopoulos, J.D. and Lucovsky, G. (Springer, Berlin, 1984), p. 301.Google Scholar
[7] Xie, Y.H., Wilson, W.L., Ross, F.M., Mucha, J.A., Fitzgerald, E.A., Maccauly, J.M., and Harris, T.D., J. Appl. Phys. 71, 2403 (1992).Google Scholar
[8] Cullis, A.G., Canham, L.T., and Dosser, O.D., JEOL News, 30E, 4 (1992).Google Scholar