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Computer Modeling of Lateral Epitaxial Growth OverOxide

Published online by Cambridge University Press:  25 February 2011

Lynn O. Wilson  and
G. K. Celler
Lynn O. Wilson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
G. K. Celler
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
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Abstract

Radiative melting of Si with an extended stationary heater and itscrystallization are modeled numerically. The two-dimensional model providesthe velocity and shape of the solid-liquid interface, above and below aburied oxide structure with slit-shaped openings. The results showqualitative agreement with the experimental data. Superheating andundercooling are included in the calculation and the amount of superheatingis confirmed experimentally.

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References

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