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Computer Simulation of Channeling Effects in Ion Implantation

Published online by Cambridge University Press:  25 February 2011

Matthias Posselt*
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Materials Research, P.O. Box 19, D(O)-8051 Dresden, Germany
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Abstract

Our binary collision code Crystal-TRIM is applied to simulate 1 MeV P+ implantation into single-crystalline silicon at ion incidence into the [100] axial channel direction and doses between 2 × 1013 cm−2 and 6.7 × 1014 cm−2. The maximum penetration depth of the ions is determined by the electronic stopping of the well-channeled particles. The shape of the range distributions depends on (i) the thin amorphous surface layer on silicon, (ii) the radiation-induced production of vacancies and interstitials, and (iii) the static atomic disorder due to electronic energy deposition. The comparison of experimental data with results of computer simulations shows that at low doses at least the influence of the first two factors has to be considered. At higher doses the radiation damage due to nuclear energy deposition dominates the other effects.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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