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The “Computer-Aided Epitaxy” Si:MBE-Control System

Published online by Cambridge University Press:  22 February 2011

R. A. Kubiak ,
S. M. Newstead ,
A. R. Powell ,
D. K. Bowen ,
R. D. Barlow ,
M. G. Dowsett ,
T. E. Whall  and
E. H. C. Parker
R. A. Kubiak
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
S. M. Newstead
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
A. R. Powell
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
D. K. Bowen
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
R. D. Barlow
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
M. G. Dowsett
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
T. E. Whall
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
E. H. C. Parker
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
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Abstract

A dedicated, grower-friendly MBE computer control system is described, and its performance in demonstrated in growth of high resolution doped SiGe structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 55
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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