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Contactless Characterization of the Surface Property of the Si+-Implanted GaAs

Published online by Cambridge University Press:  15 February 2011

Akira Usami ,
Hideaki Yoshida ,
Masaya Ichimura  and
Takao Wada
Akira Usami
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, JAPAN
Hideaki Yoshida
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, JAPAN
Masaya Ichimura
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, JAPAN
Takao Wada
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, JAPAN
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Abstract

The surface recombination of GaAs which has a high carrier concentration layer (HCCL) formed by Si+ implantation has been investigated using the reflectance microwave probe (RMP) method. The RMP method enables us to evaluate the surface property of GaAs contactlessly and easily. The experimental results of the samples which were implanted with doses ranging from 1.0×1011 to 3.9×1012cm-2 at an energy of lOOke V indicate that the effective surface recombination velocity decreases with dosage because of HCCL formed after the annealing. On the other hand, the results of the samples which were implanted with a dose of 3.9 × 1012cm-2 at energies ranging from 30 to 180keV indicate that the effective surface recombination velocity increases with energy for energies larger than 50keV. We understood the reason by comparing with the numerical calculation results of an effective surface recombination velocity at a high-low junction interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 347: Symposium O – Microwave Processing of Materials IV , 1994 , 283
Copyright
Copyright © Materials Research Society 1994

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References

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