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Control of Crystal Orientation of Epitaxial Si nanowires on Si Substrate Using AAO template

Published online by Cambridge University Press:  18 July 2011

Tomohiro Shimizu ,
Qi Wang ,
Chonge Wang ,
Fumihiro Inoue ,
Makoto Koto ,
Minsung Jeon  and
Shoso Shingubara
Tomohiro Shimizu
Affiliation:
Faculty of System Engineering Science, Kansai University, Suita, Osaka 564-8680, JAPAN
Qi Wang
Affiliation:
Faculty of System Engineering Science, Kansai University, Suita, Osaka 564-8680, JAPAN
Chonge Wang
Affiliation:
Faculty of System Engineering Science, Kansai University, Suita, Osaka 564-8680, JAPAN
Fumihiro Inoue
Affiliation:
Faculty of System Engineering Science, Kansai University, Suita, Osaka 564-8680, JAPAN
Makoto Koto
Affiliation:
Corporate R&D headquarters, Canon inc., Ohta, Tokyo 146-8501, JAPAN
Minsung Jeon
Affiliation:
Faculty of System Engineering Science, Kansai University, Suita, Osaka 564-8680, JAPAN
Shoso Shingubara
Affiliation:
Faculty of System Engineering Science, Kansai University, Suita, Osaka 564-8680, JAPAN
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Abstract

Control of crystal orientation of vertically grown epitaxial Si (111) and (110) nanowire arrays on Si substrate has been demonstrated using a combination of an anodic aluminum oxide (AAO) template and vapor – liquid – solid (VLS) growth method. The crystal orientation of the nanowire was investigated by transmission electron microscopy. A growth direction of the nanowire arrays was guided perpendicular to the surface of the substrate by the AAO template, and the crystal orientation of the nanowire arrays was selected using the single crystal Si substrate properly cut in desired orientation.

Keywords

nanostructurecrystal growthtransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1350: Symposium EE – Semiconductor Nanowires—From Fundamentals to Applications , 2011 , mrss11-1350-ee03-02
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

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