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Control of Etching of LiNbO3, by Implant Damage Profile Tailoring

Published online by Cambridge University Press:  26 February 2011

P. J. Brannon ,
C. I. H. Ashby  and
G. W. Arnold
P. J. Brannon
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–5800
C. I. H. Ashby
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–5800
G. W. Arnold
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–5800
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Abstract

Damage-profile tailoring using multi-energy ion implants can produce smooth side walls and deeper etched features with ion-bombardment-enhanced wet etching of LiNb03 than is possible with a single-energy implant. High ion fluences can produce buried microcracks which may contribute to propagation losses commonly observed in ion-implanted waveguides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 469
Copyright
Copyright © Materials Research Society 1998

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References

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