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Controlled Fabrication by LPCVD of Luminescent SiGe/SiO2 (LTO) Very Thin Multilayers

Published online by Cambridge University Press:  01 February 2011

A. Rodríguez ,
J. Sangrador ,
T. Rodríguez ,
M. Avella ,
A. C. Prieto ,
J. Jiménez ,
M. I. Ortiz  and
C. Ballesteros
A. Rodríguez
Affiliation:
Dpto. Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain
J. Sangrador
Affiliation:
Dpto. Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain
T. Rodríguez
Affiliation:
Dpto. Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain
M. Avella
Affiliation:
Dpto. Física de la Materia Condensada E.T.S.I.I., U. de Valladolid, Valladolid, Spain.
A. C. Prieto
Affiliation:
Dpto. Física de la Materia Condensada E.T.S.I.I., U. de Valladolid, Valladolid, Spain.
J. Jiménez
Affiliation:
Dpto. Física de la Materia Condensada E.T.S.I.I., U. de Valladolid, Valladolid, Spain.
M. I. Ortiz
Affiliation:
Dpto. Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain
C. Ballesteros
Affiliation:
Dpto. Física, E.P.S., Universidad Carlos III, 28015 Leganés (Madrid), Spain.
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Abstract

Amorphous SiGe/SiO2 multilayers with controlled thickness in the range of nanometers have been deposited by LPCVD at low temperature in a single multistep run. Continuous and discontinuous layers have been deposited. No intermixing between the SiGe and SiO2 layers has been observed. As-deposited and crystallized multilayers have been characterized by Raman spectroscopy, Cathodoluminescence and TEM. The luminescence emission is more intense in the discontinuous layers than in the continuous ones.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T3.35
Copyright
Copyright © Materials Research Society 2004

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References

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