Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-23T17:13:56.618Z Has data issue: false hasContentIssue false
  • English
  • Français

Controlled Fabrication by LPCVD of Luminescent SiGe/SiO2 (LTO) Very Thin Multilayers

Published online by Cambridge University Press:  01 February 2011

A. Rodríguez ,
J. Sangrador ,
T. Rodríguez ,
M. Avella ,
A. C. Prieto ,
J. Jiménez ,
M. I. Ortiz  and
C. Ballesteros
A. Rodríguez
Affiliation:
Dpto. Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain
J. Sangrador
Affiliation:
Dpto. Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain
T. Rodríguez
Affiliation:
Dpto. Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain
M. Avella
Affiliation:
Dpto. Física de la Materia Condensada E.T.S.I.I., U. de Valladolid, Valladolid, Spain.
A. C. Prieto
Affiliation:
Dpto. Física de la Materia Condensada E.T.S.I.I., U. de Valladolid, Valladolid, Spain.
J. Jiménez
Affiliation:
Dpto. Física de la Materia Condensada E.T.S.I.I., U. de Valladolid, Valladolid, Spain.
M. I. Ortiz
Affiliation:
Dpto. Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain
C. Ballesteros
Affiliation:
Dpto. Física, E.P.S., Universidad Carlos III, 28015 Leganés (Madrid), Spain.
Get access

Abstract

Amorphous SiGe/SiO2 multilayers with controlled thickness in the range of nanometers have been deposited by LPCVD at low temperature in a single multistep run. Continuous and discontinuous layers have been deposited. No intermixing between the SiGe and SiO2 layers has been observed. As-deposited and crystallized multilayers have been characterized by Raman spectroscopy, Cathodoluminescence and TEM. The luminescence emission is more intense in the discontinuous layers than in the continuous ones.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T3.35
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pavesi, L.. Nature 408, 440 (2000).Google Scholar
2. Olivares, J., Sangrador, J., Rodríguez, A., Rodríguez, T.. J. Electrochem. Soc. 148, C685 (2001).Google Scholar
3. Yue, G. Z., Lorentzen, J. D., Lin, J., Hau, D. X., Wang, Q.. Appl. Phys. Lett. 75, 492 (1999).Google Scholar
4. Hazra, S., Sakata, I., Yamanaka, M., Suzuki, E.. Appl. Phys. Lett. 80, 4115 (2002).Google Scholar
5. Trukhin, A. N., Janssons, J., Fitting, H. J., Barfels, T., Shmidt, B.. J. Non Cryst. Solids 331, 91 (2003).Google Scholar
6. Lu, M. J., Wu, X. M., Yao, W. G.. Mater. Sci. Eng. B 100, 152 (2003).Google Scholar