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Correlation Between Amorphous Silicon Solar Cell Parameters and Pbotoinduced Current Noise Power Spectrum

Published online by Cambridge University Press:  21 February 2011

F. Demichelis ,
P. Rava  and
A. Tagliaferro
F. Demichelis
Affiliation:
Dipartimento Fisica, Politecnico di Torino, C.so Duca Abruzzi 24, Torino, (Italy)
P. Rava
Affiliation:
Elettrorava S.p.A., 10040 Savonera, Torino, (Italy)
A. Tagliaferro
Affiliation:
Dipartimento Fisica, Politecnico di Torino, C.so Duca Abruzzi 24, Torino, (Italy)
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Abstract

A new technique based on measurements of photoinduced current noise in amorphous silicon solar cells is reported. A 1/fn (n-1) component, superimposed to a frequency independent one due to simple shot noise, is attributed to the presence of defects limiting the conversion efficiency of the cell. In particular large defects can easily be detected since they are characterized by a very large increase of the l/fn component. In general a correlation is found between the intensity of the l/fn component and short circuit current density, fill factor and cell conversion efficiency.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 241
Copyright
Copyright © Materials Research Society 1991

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References

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