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Correlation Between On/Off Ratio and Electron Traps in Hole-Only Carbon-Nanotube-Enabled Vertical Field Effect Transistors

Published online by Cambridge University Press:  31 January 2011

Mitchell Austin McCarthy ,
Bo Liu  and
Andrew Gabriel Rinzler
Mitchell Austin McCarthy
Affiliation:
mitchmcc@ufl.edu, University of Florida, Materials Science and Engineering, Gainesville, Florida, United States
Bo Liu
Affiliation:
liubo12@ufl.edu, University of Florida, Physics, Gainesville, Florida, United States
Andrew Gabriel Rinzler
Affiliation:
rinzler@phys.ufl.edu, University of Florida, Physics, Gainesville, Florida, United States
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Abstract

Single wall carbon nanotube enabled vertical field effect transistors (VFETs) are studied and the dependence of the on/off ratio on the relative number of electron traps is investigated. Current versus voltage measurements on several VFETs with varying interfacial trap densities in the vicinity of the nanotube network/polymer active layer junction are taken. It is found that the on/off ratio of the VFET changes from 1600 to 20 for typical operational currents as the onset gate voltage in the off-to-on transfer curve shifts from 94 V to 72 V. Such a strong dependence on trapped charge motivates future work to uncover the mechanism of charge trapping.

Keywords

transparent conductorthin filmsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1154: Symposium B – Concepts in Molecular and Organic Electronics , 2009 , 1154-B05-11
Copyright
Copyright © Materials Research Society 2009

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