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Correlation of resistance switching behaviors with dielectric functions of manganite films: A study by spectroscopic ellipsometry

Published online by Cambridge University Press:  04 February 2014

Masaki Yamada ,
Toshihiro Nakamura  and
Osamu Sakai
Masaki Yamada
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
Toshihiro Nakamura
Affiliation:
Department of Engineering Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
Osamu Sakai
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
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Abstract

Pr0.5Ca0.5MnO3 (PCMO) films were deposited on LaAlO3 (100) substrates under pressure from 1.33 to 5.33 Pa by RF magnetron sputtering. Resistance switching and dielectric functions of PCMO films were studied by DC current-voltage characteristic measurements and spectroscopic ellipsometry (SE) measurements. Resistance switching was observed in the devices composed of PCMO films deposited under low pressures of 1.33 and 2.67 Pa. SE measurements revealed that dielectric functions also depended on deposition pressure. PCMO films deposited under lower pressure had larger high-frequency dielectric constant, larger oscillator strength of the electric dipole charge transitions in MnO6 octahedral complexes, and lower oscillator strength of d-d transitions in Mn3+ and Mn4+ ions. SE measurements suggested that oxygen vacancies and MnO6 octahedral complexes play an important role in resistance switching in PCMO films.

Keywords

optical propertiesthin filmplasma deposition
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1633: Symposium R – Oxide Semiconductors , 2014 , pp. 117 - 122
Copyright
Copyright © Materials Research Society 2014 

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