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Correlation of the 0.8 eV Emission Band with the EL6 Center in GaAs

Published online by Cambridge University Press:  25 February 2011

S. Alaya ,
M. A. Zaidi ,
G. Marrakchi ,
H. Maaref ,
H. J. Von Bardeleben  and
J. C. Bourgoin
S. Alaya
Affiliation:
Faculté des Sciences, Monastir 5000 TUNISIA
M. A. Zaidi
Affiliation:
Faculté des Sciences, Monastir 5000 TUNISIA
H. Maaref
Affiliation:
Faculté des Sciences, Monastir 5000 TUNISIA
H. J. Von Bardeleben
Affiliation:
Groupe de Physique des Solides de L’ENS, Centre National de la Recherche Scientifiqueb), Tour 23, 2 place Jussieu Paris Cedex 05 -75251. FRANCE
J. C. Bourgoin
Affiliation:
Groupe de Physique des Solides de L’ENS, Centre National de la Recherche Scientifiqueb), Tour 23, 2 place Jussieu Paris Cedex 05 -75251. FRANCE
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Abstract

Combined photoluminescence and DLTS investigations of semi-insulating and n-type GaAs before and after a 15min, 850°C heat treatment under AsH3 reveal that the treatment which anneals the EL6 center leads also to a disappearence of the O.8eV PL band. The suggested correlation between EL6 and the O.8eV PL is confirmed by the determination of the electron capture barrier of EL6 and the Franck-Condon shift deduced from the temperature dependence of the PL band leading to a consistant Configuration Coordinate diagram of this defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 163
Copyright
Copyright © Materials Research Society 1990

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