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Cpm Measurenents on a-Si:H Based Pin Solar Cells: Thickness and Bias Voltage Effects
Published online by Cambridge University Press: 25 February 2011
Abstract
We use measurements of subbandgap photocurrent spectra on films, barrier structures and pin cells of different thicknesses to estimate the valence band tailing and to characterize the dangling bond defect region. Large differences in signal sizes in the structures are observed and particularly for thick and thin pin-diodes, the dependence of the signal on voltage bias is discussed. In pin-diodes, these effects can be explained by a change of defect occupation in the i-layer.
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- Copyright © Materials Research Society 1989
References
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