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Cpm Measurenents on a-Si:H Based Pin Solar Cells: Thickness and Bias Voltage Effects

Published online by Cambridge University Press:  25 February 2011

H. Rübel ,
M. Gorn ,
B. Scheppat ,
R. Geyer ,
P. Lechner  and
N. Kniffler
H. Rübel
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
M. Gorn
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
B. Scheppat
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
R. Geyer
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
P. Lechner
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
N. Kniffler
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
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Abstract

We use measurements of subbandgap photocurrent spectra on films, barrier structures and pin cells of different thicknesses to estimate the valence band tailing and to characterize the dangling bond defect region. Large differences in signal sizes in the structures are observed and particularly for thick and thin pin-diodes, the dependence of the signal on voltage bias is discussed. In pin-diodes, these effects can be explained by a change of defect occupation in the i-layer.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 465
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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